Hydrogen equilibration in polycrystalline silicon
نویسندگان
چکیده
منابع مشابه
Hydrogen equilibration in polycrystalline silicon
Hydrogen equilibration in polycrystalline silicon was investigated as a function of annealing time and temperature using electron spin resonance and hydrogen effusion measurements. During a vacuum anneal at least 1.5 1021 cm−3 H atoms are mobile in the lattice, however, only about 3.7 1018 cm−3 H atoms passivate Si dangling bonds. The results show that the annealing treatment can cause the vast...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2007
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2716348